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TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
Rev. 01 -- 24 March 2006 Product data sheet
1. General description
The TZA3036 is a transimpedance amplifier with Automatic Gain Control (AGC), designed to be used in STM1/OC3 fiber optic links. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage. It offers a current mirror of average photo current for RSSI monitoring to be used in SFF-8472 compliant modules. The low noise characteristics makes it suitable for STM1/OC3 applications, but also for FTTx applications.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
2. Features
I I I I I I I I I I Low equivalent input noise, typically 12 nA (RMS) Wide dynamic range, typically 0.18 A to 1.5 mA (p-p) Differential transimpedance of 69 k (typical) Bandwidth from DC to 160 MHz (typical) Differential outputs On-chip (AGC) with possibility of external control Single supply voltage 3.3 V; range 2.9 V to 3.6 V Bias voltage for PIN diode On-chip current mirror of average photo current for RSSI monitoring Identical ports available on both sides of die for easy bond layout and RF polarity selection
3. Applications
I Digital fiber optic receiver modules in telecommunications transmission systems, in high speed data networks or in FTTx systems.
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
4. Ordering information
Table 1. Ordering information Package Name TZA3036U Description bare die, dimensions approximately 0.82 mm x 1.3 mm Version Type number
5. Block diagram
CVCC
VCC 4 or 17 0.2 x IDREF IDREF
AGC 6 or 15
TZA3036
IIDREF_MON IDREF_MON 5 or 16 RDREF DREF 1 or 3
290
BIASING
RIDREF_MON
CDREF
DPHOTO
GAIN CONTROL
PEAK DETECTOR output buffers 7 or 13 OUTQ
IPIN IPHOTO 2
single-ended to differential converter
low noise amplifier 9, 10, 11, 12 GND
8 or 14 OUT
001aad075
Fig 1. Block diagram
TZA3036_1
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Product data sheet
Rev. 01 -- 24 March 2006
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Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
6. Pinning information
6.1 Pinning
IPHOTO
DREF
3
2
DREF 1
VCC IDREF_MON
4
17
VCC IDREF_MON
5
16
AGC
6
15
AGC
TZA3036
OUTQ 7 14 OUT
OUT
8
13
OUTQ
GND
9
12
GND
GND
10
11
GND
001aad076
Fig 2. Pin configuration
6.2 Pin description
Table 2. Bonding pad description Bonding pad locations with respect to the center of the die (see Figure 10); X and Y are in m. Symbol DREF IPHOTO DREF VCC IDREF_MON AGC OUTQ OUT GND GND Pad 1 2 3 4 5 6 7 8 9 10 X -493.6 -493.6 -493.6 -353.6 -213.6 -73.6 66.4 206.4 346.4 486.4 Y 140 0 -140 -278.6 -278.6 -278.6 -278.6 -278.6 -278.6 -278.6 Type output input output supply output input output output ground ground Description bias voltage output for PIN diode; connect cathode of PIN diode to pad 1 or pad 3 current input; anode of PIN diode should be connected to this pad bias voltage output for PIN diode; connect cathode of PIN diode to pad 1 or pad 3 supply voltage; connect supply to pad 4 or pad 17 current output for RSSI measurements; connect a resistor to pad 5 or pad 16 and ground AGC voltage; use pad 6 or pad 15 data output; complement of pad OUT; use pad 7 or pad 13 data output; use pad 8 or pad 14 [1] ground; connect together pads 9, 10, 11 and 12 as many as possible ground; connect together pads 9, 10, 11 and 12 as many as possible
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
TZA3036_1
Product data sheet
Rev. 01 -- 24 March 2006
3 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
Table 2. Bonding pad description ...continued Bonding pad locations with respect to the center of the die (see Figure 10); X and Y are in m. Symbol GND GND OUTQ OUT AGC IDREF_MON VCC
[1]
Pad 11 12 13 14 15 16 17
X 486.4 346.4 206.4 66.4 -73.6 -213.6 -353.6
Y 278.6 278.6 278.6 278.6 278.6 278.6 278.6
Type ground ground output output input output supply
Description ground; connect together pads 9, 10, 11 and 12 as many as possible ground; connect together pads 9, 10, 11 and 12 as many as possible data output; complement of pad OUT; use pad 7 or pad 13 data output; use pad 8 or pad 14 [1] AGC voltage; use pad 6 or pad 15 current output for RSSI measurements; connect a resistor to pad 5 or pad 16 and ground supply voltage; connect supply to pad 4 or pad 17
These pads go HIGH when current flows into pad IPHOTO.
7. Functional description
The TZA3036 is a TransImpedance Amplifier (TIA) intended for use in fiber optic links for signal recovery in STM1/OC3 or FTTx applications. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage. The most important characteristics of the TZA3036 are high receiver sensitivity, wide dynamic range and large bandwidth. Excellent receiver sensitivity is achieved by minimizing transimpedance amplifier noise. The TZA3036 has a wide dynamic range to handle the signal current generated by the PIN diode which can vary from 0.18 A to 1.5 mA (p-p). This is implemented by an AGC loop which reduces the preamplifier feedback resistance so that the amplifier remains linear over the whole input range. The AGC loop hold capacitor is integrated on-chip, so an external capacitor is not required. The bandwidth of TZA3036 is optimized for STM1/OC3 application. It works from DC onward due to the absence of offset control loops. This allows for excellent performance regardless of signal content (long sequences of identical bits can be converted). A differential amplifier converts the output of the preamplifier to a differential voltage.
7.1 PIN diode connections
The performance of an optical receiver is largely determined by the combined effect of the transimpedance amplifier and the PIN diode. In particular, the method used to connect the PIN diode to the input (pad IPHOTO) and the layout around the input pad strongly influences the main parameters of a transimpedance amplifier, such as sensitivity, bandwidth, and PSRR. Sensitivity is most affected by the value of the total capacitance at the input pad. Therefore, to obtain the highest possible sensitivity the total capacitance should be as low as possible.
TZA3036_1
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Product data sheet
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Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
The parasitic capacitance can be minimized through: 1. Reducing the capacitance of the PIN diode. This is achieved by proper choice of PIN diode and typically a high reverse voltage. 2. Reducing the parasitics around the input pad. This is achieved by placing the PIN diode as close as possible to the TIA. The PIN diode can be biased with a positive or a negative voltage. Figure 3 shows the PIN diode biased positively, using the on-chip bias pad DREF. The voltage at DREF is derived from VCC by a low-pass filter comprising internal resistor RDREF and external capacitor C2 which decouples any supply voltage noise. The value of external capacitor C2 affects the value of PSRR and should have a minimum value of 470 pF. Increasing this value improves the value of PSRR. The current through RDREF is measured and sourced at pad IDREF_MON, see Section 7.3. If the biasing for the PIN diode is done external to the IC, pad DREF can be left unconnected. If a negative bias voltage is used, the configuration shown in Figure 4 can be used. In this configuration, the direction of the signal current is reversed to that shown in Figure 3. It is essential that in these applications, the PIN diode bias voltage is filtered to achieve the best sensitivity. For maximum freedom on bonding location, 2 outputs are available for DREF (pads 1 and 3). These are internally connected. Both outputs can be used if necessary. If only one is used, the other can be left open.
VCC 4 or 17 DREF 1 or 3 RDREF IPIN
C2 470 pF 290 RDREF 290
VCC 4 or 17 DREF 1 or 3
IPHOTO 2
IPHOTO 2 IPIN
TZA3036
001aad077
TZA3036
negative bias voltage
001aad078
Fig 3. The PIN diode connected between the input and pad DREF
Fig 4. The PIN diode connected between the input and a negative supply voltage
TZA3036_1
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Product data sheet
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Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
7.2 Automatic gain control
The TZA3036 transimpedance amplifier can handle input currents from 0.18 A to 1.5 mA which is equivalent to a dynamic range of 78 dB (electrical equivalent with 39 dB optical). At low input currents, the transimpedance must be high to obtain enough output voltage, and the noise should be low enough to guarantee a minimum bit error rate. At high input currents however, the transimpedance should be low to prevent excessive distortion at the output stage. To achieve the dynamic range, the gain of the amplifier depends on the level of the input signal. This is achieved in the TZA3036 by an AGC loop. The AGC loop comprises a peak detector and a gain control circuit. The peak detector detects the amplitude of the signal and stores it in a hold capacitor. The hold capacitor voltage is compared to a threshold voltage. The AGC is only active when the input signal level is larger than the threshold level and is inactive when the input signal is smaller than the threshold level. When the AGC is inactive, the transimpedance is at its maximum. When the AGC is active, the feedback resistor value of the transimpedance amplifier is reduced, reducing its transimpedance, to keep the output voltage constant. Figure 5 shows the transimpedance as function of the input current. To reduce sensitivity to offsets and output loads, the AGC detector senses the output just before the output buffer. Figure 6 shows the AGC voltage as function of the input current.
102 transimpedance (k) 10
001aad079
3.5 VAGC (V) 2.5
001aad080
1
1.5
10-1 10-1
1
10
102
103 104 IPIN (A)
0.5 10-1
1
10
102
103 104 IPIN (A)
Fig 5. Transimpedance as function of the PIN diode current
Fig 6. AGC voltage as function of the PIN diode current
TZA3036_1
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Product data sheet
Rev. 01 -- 24 March 2006
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Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
For applications where the transimpedance is controlled by the TIA it is advised to leave the AGC pads unconnected to achieve fast attack and decay times. The AGC function can be overruled by applying a voltage to pad AGC. In this configuration, connecting pad AGC to ground gives maximum transimpedance and connecting it to VCC gives minimum transimpedance. This is depicted in Figure 7. The AGC voltage should be derived from the VCC for proper functioning. For maximum freedom on bonding location, 2 pads are available for AGC (pads 6 and 15). These pads are internally connected. Both pads can be used if necessary.
102 transimpedance (k) 10
001aad081
1
10-1 0.2
0.4
0.6
0.8 1.0 VAGC/VCC
Fig 7. Transimpedance as function of the AGC voltage
7.3 Monitoring RSSI via IDREF_MON
To facilitate RSSI monitoring in modules (e.g. SFF-8472 compliant SFP modules), a current output is provided. This output gives a current which is 20 % of the average DREF current through the 290 bias resistor. By connecting a resistor to the IDREF_MON output, a voltage proportional with to average input power can be obtained. The RSSI monitoring is implemented by measuring the voltage over the 290 bias resistor. This method is preferred over a simple current mirror because at small photo currents the voltage drop over the resistor is very small. This gives a higher bias voltage yielding better performance of the photodiode. For maximum freedom on bonding location, 2 pads are available for IDREF_MON (pads 5 and 16). These pads are internally connected. Both pads can be used if necessary. If only one is used, the other can be left open.
TZA3036_1
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Product data sheet
Rev. 01 -- 24 March 2006
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Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
8. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCC Vn supply voltage voltage on any other pin pad IPHOTO OUT, OUTQ AGC, IDREF_MON DREF In current on any other pin pad IPHOTO OUT, OUTQ AGC, IDREF_MON DREF Ptot Tamb Tj Tstg total power dissipation ambient temperature junction temperature storage temperature -1 -10 -0.2 -4.0 -40 -65 +2.5 +10 +0.2 +4.0 300 +85 150 +150 mA mA mA mA mW C C C -0.5 -0.5 -0.5 -0.5 +2.0 VCC + 0.5 VCC + 0.5 VCC + 0.5 V V V V Conditions Min -0.5 Max +3.8 Unit V
9. Characteristics
Table 4. Characteristics Typical values at Tj = 25 C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient temperature range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified. Symbol VCC ICC Ptot Tj Tamb Rtr f-3dB(h) In(rms)(itg)(tot) Parameter supply voltage supply current total power dissipation junction temperature ambient temperature small-signal transresistance measured differentially; AC-coupled, RL(dif) = 100
[1]
Conditions AC-coupled; RL(dif) = 100 ; excluding IDREF and IIDREF_MON
Min 2.9 -40 -40 46 110 -
Typ 3.3 20 66 +25 69 160 12
Max 3.6 24 87 +125 +85 98 16
Unit V mA mW C C k MHz nA
high frequency -3 dB point CPIN = 0.7 pF total integrated RMS noise referenced to input; current over bandwidth CPIN = 0.7 pF; f-3dB(min) = 110 MHz third-order Bessel filter attack time decay time peak-to-peak AGC threshold voltage AGC pad unconnected AGC pad unconnected referenced to output; measured differentially
Automatic gain control loop: pad AGC tatt tdecay Vth(AGC)(p-p) 10 40 125 s s mV
TZA3036_1
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Product data sheet
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Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
Table 4. Characteristics ...continued Typical values at Tj = 25 C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient temperature range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified. Symbol R(DREF-VCC) TCRDREF Input: pad IPHOTO IIPHOTO(p-p) Vbias(i) Vmon IIDREF_MON/IDREF Ioffset(mon) TCI(offset)mon peak-to-peak current on pad IPHOTO input bias voltage monitor voltage monitor current ratio monitor offset current temperature coefficient of monitor offset current common mode output voltage peak-to-peak differential output voltage AC-coupled; RL(dif) = 100 AC-coupled; RL(dif) = 100 IPIN = 0.18 A (p-p) x Rtr IPIN = 20 A (p-p) IPIN = 1100 A (p-p) RO(dif) tr tf differential output resistance rise time fall time tested at DC level 20 % to 80 %; IPIN = 100 A (p-p) 80 % to 20 %; IPIN = 100 A (p-p) 8 12 125 250 100 800 1000 500 mV mV mV ps ps ratio IIDREF_MON / IDREF Tamb = 25 C
[1] [2]
Parameter resistance between pin DREF and pin VCC temperature coefficient of RDREF
Conditions tested at DC level; Tamb = 25 C
Min 240 -
Typ 290 0.33
Max 330 -
Unit /C
Bias voltage: pad DREF
-1000 0 19.5 0 20 10 30
+1500 900
A mV
Monitor: pad IDREF_MON VCC - 0.4 V 20.5 20 % A nA/C
Data outputs: pads OUT and OUTQ VO(cm) Vo(dif)(p-p) VCC - 1.2 V
[1] [2]
Guaranteed by design. The input current range is determined by the allowed Pulse Width Distortion (PWD), which is < 5 % over the whole input current range.
pulse width The PWD is defined as: PWD = ------------------------------ - ( 0.5 ) x 100 % , where T is the clock period. T
TZA3036_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
9 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
10. Application information
For maximum freedom on bonding location, 2 outputs are available for OUT and OUTQ. The outputs should be used in pairs: pad 14 with pad 7 or pad 8 with pad 13. Pad 8 is internally connected with pad 14, pad 7 is internally connected with pad 13. The device is guaranteed with only one pair used. The other pair should be left open. Two examples of the bonding possibilities are shown in Figure 8.
IDREF_MON
VCC
VCC
IDREF_MON
C
PIN
C
PIN
C
C
OUTQ
TZA3036U
OUT
OUT
TZA3036U
OUTQ
GND
GND
001aad082
Fig 8. Application diagram highlighting flexible pad layout
TZA3036_1
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Product data sheet
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Product data sheet Rev. 01 -- 24 March 2006
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11. Test information
Philips Semiconductors
NETWORK ANALYZER
S-PARAMETER TEST SET PORT1 Zo = 50 PORT2 Zo= 50
VCC SAMPLING OSCILLOSCOPE DC-IN 4 or 17 8 or 14
8.2 k 22 nF 2200 R 55 22 nF
OUT
1
2
TRIGGER INPUT
TZA3036
IPHOTO 2 7 or 13 9, 10, 11, 12 GND OUTQ
22 nF
Zo = 50
SDH/SONET STM1/OC3 transimpedance amplifier
PATTERN GENERATOR DATA CLOCK
001aad083
TZA3036
Total impedance of the test circuit (Ztot(tc)) is calculated by the equation Ztot(tc) = s21 x (R + Zi) x 2, where s21 is the insertion loss of ports 1 and 2. Typical values: R = 2200 , Zi = 300 .
Fig 9. Test circuit
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TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
12. Bare die information
17
16
15
14
13
12
11
1
Y (0,0) X
2
3
4
5
6
7
8
9
10
001aac627
Origin is center of die.
Fig 10. Bonding pad locations Table 5. Parameter Glass passivation Bonding pad dimension Metallization Thickness Die dimension Backing Attach temperature Attach time Physical characteristics of the bare die Value 0.3 m PSG (PhosphoSilicate Glass) on top of 0.8 m silicon nitride minimum dimension of exposed metallization is 90 m x 90 m (pad size = 100 m x 100 m) except pads 2 and 3 which have exposed metallization of 80 m x 80 m (pad size = 90 m x 90 m) 2.8 m AlCu 380 m nominal 820 m x 1300 m ( 20 m2) silicon; electrically connected to GND potential through substrate contacts < 440 C; recommended die attach is glue < 15 s
13. Package outline
Not applicable.
TZA3036_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
12 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
14. Handling information
14.1 General
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be completely safe you must take normal precautions appropriate to handling MOS devices; see JESD625-A and/or IEC61340-5.
14.2 Additional information
Pad IPHOTO has limited protection to ensure good RF performance. This pad should be handled with extreme care.
15. Abbreviations
Table 6. Acronym SDH SONET RSSI FTTx STM1 OC3 PIN PSRR Abbreviations Description Synchronous Digital Hierarchy Synchronous Optical NETwork Received Signal Strength Indicator Fiber To The "x" Synchronous Transport Mode 1 (155.52 Mbit/s) Optical Carrier level 3 (155.52 Mbit/s) Positive Intrinsic Negative Power Supply Rejection Ratio
16. Revision history
Table 7. Revision history Release date 20060324 Data sheet status Product data sheet Change notice Supersedes Document ID TZA3036_1
TZA3036_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
13 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
17. Legal information
17.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com.
17.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Bare die -- All die are tested on compliance with all related technical specifications as stated in this data sheet up to the point of wafer sawing for a period of ninety (90) days from the date of delivery by Philips Semiconductors. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post-packing tests performed on individual die or wafers. Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used. All die sales are conditioned upon and subject to the customer entering into a written die sale agreement with Philips Semiconductors through its legal department.
17.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
18. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
TZA3036_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
14 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
19. Contents
1 2 3 4 5 6 6.1 6.2 7 7.1 7.2 7.3 8 9 10 11 12 13 14 14.1 14.2 15 16 17 17.1 17.2 17.3 17.4 18 19 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 PIN diode connections . . . . . . . . . . . . . . . . . . . 4 Automatic gain control . . . . . . . . . . . . . . . . . . . 6 Monitoring RSSI via IDREF_MON . . . . . . . . . . 7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Application information. . . . . . . . . . . . . . . . . . 10 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Bare die information . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Handling information. . . . . . . . . . . . . . . . . . . . 13 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Additional information . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 24 March 2006 Document identifier: TZA3036_1

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